Modelling MOSFET gate length variability for future technology nodesPATSIS, G. P.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2541-2543, issn 1862-6300, 3 p.Conference Paper

Modelling and evaluation of a thermal microfluidic sensor fabricated on plastic substratePATSIS, G. P; PETROPOULOS, A; KALTSAS, G et al.Microsystem technologies. 2012, Vol 18, Num 3, pp 359-364, issn 0946-7076, 6 p.Article

Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulationsPATSIS, G. P; CONSTANTOUDIS, V; GOGOLIDES, E et al.Microelectronic engineering. 2004, Vol 75, Num 3, pp 297-308, issn 0167-9317, 12 p.Article

Correlation length and the problem of Line Width RoughnessCONSTANTOUDIS, V; PATSIS, G. P; GOGOLIDES, E et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65181N.1-65181N.10, issn 0277-786X, isbn 978-0-8194-6637-2Conference Paper

Integrated simulation of line-edge roughness (LER) effects on sub-65 nm transistor operation : From lithography simulation, to ler metrology, to device operationPATSIS, G. P; CONSTANTOUDIS, V; GOGOLIDES, E et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6194-6, 2Vol, VOL 2,61513J.1-61513J.11Conference Paper

Simulation of surface and line-edge roughness formation in resistsPATSIS, G. P; GOGOLIDES, E.Microelectronic engineering. 2001, Vol 57-58, pp 563-569, issn 0167-9317Conference Paper

Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantificationPATSIS, G. P; DRYGIANNAKIS, D; RAPTIS, I et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 989-992, issn 0167-9317, 4 p.Conference Paper

High Resolution Patterning and Simulation on Mo/Si Multilayer for EUV MasksTSIKRIKAS, N; PATSIS, G. P; RAPTIS, I et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 679216.1-679216.7, issn 0277-786X, isbn 978-0-8194-6956-4Conference Paper

Stochastic modeling and simulation of photoresist surface and line-edge roughness evolutionPATSIS, G. P; DRYGIANNAKIS, D; CONSTANTOUDIS, V et al.European polymer journal. 2010, Vol 46, Num 10, pp 1988-1999, issn 0014-3057, 12 p.Article

Electron-Beam-Patterning Simulation and Metrology of Complex Layouts on Si/Mo Multilayer SubstratesPATSIS, G. P; DRYGIANNAKIS, D; TSIKRIKAS, N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69222K.1-69222K.8, issn 0277-786X, isbn 978-0-8194-7107-9Conference Paper

Processing effects on the dissolution properties of thin chemically amplified photoresist filmsDRYGIANNAKIS, D; RAPTIS, I; PATSIS, G. P et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 955-958, issn 0167-9317, 4 p.Conference Paper

Determining the impact of statistical fluctuations on resist line edge roughnessLEUNISSEN, L. H. A; ERCKEN, M; PATSIS, G. P et al.Microelectronic engineering. 2005, Vol 78-79, pp 2-10, issn 0167-9317, 9 p.Conference Paper

Stochastic simulation studies of molecular resistsDRYGIANNAKIS, D; PATSIS, G. P; RAPTIS, I et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1062-1065, issn 0167-9317, 4 p.Conference Paper

Stochastic simulation of material and process effects on the patterning of complex layoutsTSIKRIKAS, N; DRYGIANNAKIS, D; PATSIS, G. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 651836.1-651836.10, issn 0277-786X, isbn 978-0-8194-6637-2Conference Paper

Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resistsPATSIS, G. P; GLEZOS, N.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 359-363, issn 0167-9317Conference Paper

Fractals and device performance variability: The key role of roughness in micro and nanofabricationCONSTANTOUDIS, V; PATSIS, G. P; GOGOLIDES, E et al.Microelectronic engineering. 2012, Vol 90, Num Feb, pp 121-125, issn 0167-9317, 5 p.Conference Paper

Performance simulation, realization and evaluation of capacitive sensor arrays for the real time detection of volatile organic compoundsOIKONOMOU, P; PATSIS, G. P; RAPTIS, I et al.Microelectronic engineering. 2011, Vol 88, Num 8, pp 2359-2363, issn 0167-9317, 5 p.Conference Paper

Modeling of line edge roughness transfer during plasma etchingCONSTANTOUDIS, V; KOKKORIS, G; XYDI, P et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 968-970, issn 0167-9317, 3 p.Conference Paper

Stochastic simulation studies of molecular resists for the 32 nm technology nodeDRYGIANNAKIS, D; PATSIS, G. P; TSIKRIKAS, N et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 949-954, issn 0167-9317, 6 p.Conference Paper

Gas-mass-flow transfer-rate simulation and experimental evaluation in microchannelsPATSIS, G. P; NINOS, K; MATHIOULAKIS, D et al.Microsystem technologies. 2013, Vol 19, Num 12, pp 1919-1925, issn 0946-7076, 7 p.Article

Line Width Roughness Effects on Device Performance: The Role of the Gate Width DesignCONSTANTOUDIS, V; GOGOLIDES, E; PATSIS, G. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7641, issn 0277-786X, isbn 978-0-8194-8055-2 0-8194-8055-X, 764116.1-764116.8Conference Paper

Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designsPATSIS, G. P; TSIKRIKAS, N; DRYGIANNAKIS, D et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1575-1578, issn 0167-9317, 4 p.Conference Paper

Advanced lithography models for strict process control in the 32 nm technology nodePATSIS, G. P; DRYGIANNAKIS, D; RAPTIS, I et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 513-516, issn 0167-9317, 4 p.Conference Paper

Simulation of the combined effects of polymer size, acid diffusion length and EUV secondary electron blur on resist line-edge roughnessDRYGIANAKIS, D; NIJKERK, M. D; PATSIS, G. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65193T.1-65193T.12, issn 0277-786X, isbn 978-0-8194-6638-9Conference Paper

E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effectsGLEZOS, N; PATSIS, G. P; ROSENBUSCH, A et al.Microelectronic engineering. 1998, Vol 41-42, pp 319-322, issn 0167-9317Conference Paper